发明名称 Method and apparatus for providing thermal management on high-power integrated circuit devices
摘要 An apparatus for providing thermal management on high-power integrated circuit devices is disclosed. Initially, contacts to active devices are formed. Phase change materials are then applied over potential hot spots that can be formed by the active devices. A layer of high-thermally conductive materials is deposited over the phase change materials. The layer of high-thermally conductive materials and the phase change materials are subsequently etched according to a pattern. A layer of passivation conductive vias is subsequently applied to the phase change materials to complete the formation of phase change heatsinks.
申请公布号 US7491577(B2) 申请公布日期 2009.02.17
申请号 US20070620867 申请日期 2007.01.08
申请人 BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC. 发明人 STURCKEN KEITH K.;MCINTYRE THOMAS J.
分类号 H01L21/00 主分类号 H01L21/00
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