发明名称 |
III-nitride light emitting devices fabricated by substrate removal |
摘要 |
Devices and techniques for fabricating InAlGaN light-emitting devices are described that result from the removal of light-emitting layers from the sapphire growth substrate. In several embodiments, techniques for fabricating a vertical InAlGaN light-emitting diode structure that result in improved performance and or cost-effectiveness are described. Furthermore, metal bonding, substrate liftoff, and a novel RIE device separation technique are employed to efficiently produce vertical GaN LEDs on a substrate chosen for its thermal conductivity and ease of fabrication.
|
申请公布号 |
US7491565(B2) |
申请公布日期 |
2009.02.17 |
申请号 |
US20060330209 |
申请日期 |
2006.01.10 |
申请人 |
PHILIPS LUMILEDS LIGHTING COMPANY, LLC |
发明人 |
COMAN CARRIE CARTER;KISH, JR. FRED A.;KRAMES MICHAEL R;MARTIN PAUL S |
分类号 |
H01L21/00;H01L33/32;H01L33/40;H01S5/183;H01S5/323 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|