| 摘要 |
A semiconductor device has a semiconductor substrate and a high-resistance first conductivity type well region disposed on the semiconductor substrate. A low-resistance second conductivity type source region and a low-resistance second conductivity type drain region are formed in the well region. The well region is formed with trenches having convex and concave portions and that are disposed parallel to a source-drain direction of the source and drain regions. A gate insulating film is disposed on surfaces of the convex and concave portions of the trenches. A gate electrode is disposed on the gate insulating film.
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