发明名称 High dynamic range dual mode charge transimpedance amplifier/source follower per detector input circuit
摘要 Disclosed is a High Dynamic Range Dual Mode (HDR-DM) input circuit unit cell (10) for use with an infrared (IR) radiation detector (D1). The readout circuit unit cell includes a plurality of transistors (M1, M2, M3 and M4), switches (S1, S2 and S3), and capacitances (Cfb, Cbl and CSH) that are controllably coupled together to form, in a first mode of operation below an illumination level threshold, a CTIA input circuit (12), and to form, in a second mode of operation above the illumination level threshold, a lower gain SFD input circuit (14).
申请公布号 US7492399(B1) 申请公布日期 2009.02.17
申请号 US20040781268 申请日期 2004.02.17
申请人 RAYTHEON COMPANY 发明人 GULBRANSEN DAVID J.;HOFFMAN ALAN W.;CAULFIELD JOHN T.
分类号 H04N3/14;H01L27/00;H04N5/33;H04N5/355;H04N5/378 主分类号 H04N3/14
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