| 摘要 |
A deposition method for forming a thin film on a processed substrate by supplying a first gas including a metal, nitrogen, and carbon and a second gas reducing the first gas into a process vessel where a substrate holding table for holding the processed substrate is provided inside thereof, the deposition method includes a first step supplying the first process gas into the process vessel, and a second step supplying the second process gas so that the second process gas is plasma-excited by a plasma-exciting part provided in the process vessel. A content of at least one of the metal, nitrogen, and carbon in the thin film is controlled by changing a radio frequency power applied to the plasma-exciting part.
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