发明名称 |
Method of forming nitride films with high compressive stress for improved PFET device performance |
摘要 |
A method is provided for making a FET device in which a nitride layer overlies the PFET gate structure, where the nitride layer has a compressive stress with a magnitude greater than about 2.8 GPa. This compressive stress permits improved device performance in the PFET. The nitride layer is deposited using a high-density plasma (HDP) process, wherein the substrate is disposed on an electrode to which a bias power in the range of about 50 W to about 500 W is supplied. The bias power is characterized as high-frequency power (supplied by an RF generator at 13.56 MHz). The FET device may also include NFET gate structures. A blocking layer is deposited over the NFET gate structures so that the nitride layer overlies the blocking layer; after the blocking layer is removed, the nitride layer is not in contact with the NFET gate structures. The nitride layer has a thickness in the range of about 300-2000 Å.
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申请公布号 |
US7491660(B2) |
申请公布日期 |
2009.02.17 |
申请号 |
US20070873721 |
申请日期 |
2007.10.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;NOVELLUS SYSTEMS. INC. |
发明人 |
CONTI RICHARD A.;BOURQUE RONALD P.;KLYMKO NANCY R.;MADAN ANITA;SMITS MICHAEL C.;TILGHMAN ROY H.;WONG KWONG HON;YANG DAEWON |
分类号 |
H01L21/31;C23C14/00;C23C14/10;C23C16/00;H01L21/469 |
主分类号 |
H01L21/31 |
代理机构 |
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地址 |
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