发明名称 |
Plasma processing apparatus |
摘要 |
A plasma processing apparatus includes a chamber having a support for a substrate, and at least one gas inlet into the chamber. The apparatus is configured to alternately introduce an etch gas and a deposition gas into the chamber through the at least on gas inlet, and to strike a plasma into the etch gas and the deposition gas alternately introduced into the chamber. The apparatus is further equipped with an attenuation device for reducing and/or homogenizing the ion flux from the plasma substantially without affecting the neutral radical number density.
|
申请公布号 |
US7491649(B2) |
申请公布日期 |
2009.02.17 |
申请号 |
US20050080964 |
申请日期 |
2005.03.16 |
申请人 |
SURFACE TECHNOLOGY SYSTEMS PLC |
发明人 |
BHARDWAJ JYOTI KIRON;LEA LESLIE MICHAEL |
分类号 |
B01J19/08;H01L21/302;C23C16/505;H01J37/32;H01L21/3065 |
主分类号 |
B01J19/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|