| 发明名称 |
Superjunction power semiconductor device |
| 摘要 |
A superjunction power semiconductor device which includes spaced drift regions each extending from the bottom of a respective gate trench to the substrate of the device.
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| 申请公布号 |
US7492003(B2) |
申请公布日期 |
2009.02.17 |
| 申请号 |
US20070657150 |
申请日期 |
2007.01.24 |
| 申请人 |
SILICONIX TECHNOLOGY C. V. |
发明人 |
KINZER DANIEL M. |
| 分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
| 代理机构 |
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代理人 |
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