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发明名称
半导体积体电路装置之制造方法
摘要
于半导体积体电路装置之光微影制程中,愈来愈需要独立地以高精度来控制曝光量与聚焦值。使用先行处理过之晶圆,利用散射测量法获得光阻之剖面轮廓,藉此,使用由多变量分析法所获得之推测式独立地以高精度推断出曝光量与聚焦值,根据此修正后续处理之晶圆曝光时的聚焦设定。
申请公布号
TW200908087
申请公布日期
2009.02.16
申请号
TW097114656
申请日期
2008.04.22
申请人
瑞萨科技股份有限公司
发明人
河内敏秀;不动秀企巳
分类号
H01L21/027(2006.01);H01L21/66(2006.01)
主分类号
H01L21/027(2006.01)
代理机构
代理人
陈长文
主权项
地址
日本
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