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发明名称
半导体装置
摘要
半导体装置系具有半导体基板(101)、绝缘膜(14b)、半导体元件(EL)、及电阻元件(4t)。半导体基板(101)具有第1沟渠(T1)。绝缘膜(14b)系覆盖在第1沟渠(T1)的内面。半导体元件(EL)具有电极(13)。电阻元件(4t)被电气地接续电极(13)以成为对于流过电极13的电流之电阻,并且经由绝缘膜(14b)被设置在第1沟渠(T1)之中。从而,可得到半导体装置,其具有可以高信赖性流通大电流之占用空间小的电阻元件。
申请公布号
TW200908324
申请公布日期
2009.02.16
申请号
TW097115901
申请日期
2008.04.30
申请人
三菱电机股份有限公司
发明人
楠茂;望月浩一;川上稔
分类号
H01L29/78(2006.01);H01L29/70(2006.01)
主分类号
H01L29/78(2006.01)
代理机构
代理人
洪澄文
主权项
地址
日本
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