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发明名称
半导体装置之制造方法
摘要
一种半导体装置之制造方法,其系于一半导体基板形成一井区,然后形成一闸极氧化层于此半导体基板上和/或于此半导体基板之上方。接着,形成一闸极于此闸极氧化层之上和/或于此闸极氧化层之上方且于此闸极之下形成一容置空间(Pocket)。再对此半导体基板执行一第一瞬间退火(spike anneal)制程,之后再执行一离子布植制程于此半导体基板之源/汲极的深处。最后再对半导体基板执行一第二瞬间退火制程。
申请公布号
TW200908223
申请公布日期
2009.02.16
申请号
TW097123210
申请日期
2008.06.20
申请人
东部高科股份有限公司
发明人
吴容镐
分类号
H01L21/8238(2006.01)
主分类号
H01L21/8238(2006.01)
代理机构
代理人
许世正
主权项
地址
南韩
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