| 摘要 |
In the production of capacitors employing a titanium oxide dielectric material, a surface composed of a titanium/nitrogen compound is oxidized to form a dielectric titanium dioxide film. The base material may be titanium nitride or a layer of titanium nitride may be deposited upon a base surface for example by vacuum evaporation of titanium in the presence of nitrogen gas. The base material having thereon, or consisting of, the titanium/nitrogen compound may be surface oxidized, for example electrolytically by employing the titanium nitride base as an anode in an electrolyte such as ammonium tartrate, boric acid or nitric acid, or by heating the titanium nitride base in an oxygen atmosphere, or by ion bombardment with an inorganic oxidizing compound. According to an example, a film of titanium one micron thick was deposited on a glass target in an evaporation chamber under a pressure of 5-8 x 10-6 mm. of mercury after which dry nitrogen was introduced and the pressure maintained at 10-4 mm. of mercury while evaporation was continued until the film had increased by 1 micron in thickness. A titanium/nitrogen film having a cubic crystalline structure was obtained and this was then immediately oxidized in an electrolyte consisting of either a saturated aqueous solution of boric acid or an aqueous solution of 3% tartaric acid adjusted to pH 5 by ammonium hydroxide solution. Anodic oxidation was effected with an applied potential of 4-5 volts. The electrode so obtained was employed in conventional manner to form an electrolytic or electrostatic capacitor in conventional manner. A further example relates to the employment of a titanium/tantalum alloy spluttered on to a silica target in a nitrogen atmosphere as the titanium/nitrogen compound. Reference is made to the possible presence of aluminium or zirconium in the titanium/nitrogen compound.
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