| 摘要 |
A semiconductor memory device is provided to reduce current consumption by providing selectively a row address signal to a corresponding bank block. A semiconductor memory device includes an address decoding unit(130), a first switching unit(150), and a second switching unit(160). The address decoding unit receives address signals and provides a decoded row address signal(Ra), a first decoded bank address signal group(BA), and a second decoded bank address signal group(BA). The first switching unit provides the decoded row address signal in response to the first decoded bank address signal group of an active state. The second switching unit provides the decoded row address signal in response to the second decoded bank address signal group of an active state.
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