发明名称 SILICON COMPOUND, ULTRAVIOLET ABSORBENT, METHOD FOR MANUFACTURING MULTILAYER WIRING DEVICE AND MULTILAYER WIRING DEVICE
摘要 A silicone compound is provided to obtain a laminated insulating film structure with high reliability due to low dielectric constant and a multilayer wiring, and to contribute to high response speed of a semiconductor device. A silicone compound has a structure that at least a part of R^1~R^3 of a silicon compound is substituted with the other group, wherein the silicon compound consists of polycarbosilane represented by the chemical formula (1) or polysilazane represented by the chemical formula (2) or their mixture. The silicon compound has high absorption rate for ultraviolet rays less than 210 nm compared with an unsubstituted silicone compound.
申请公布号 KR20090016400(A) 申请公布日期 2009.02.13
申请号 KR20080076965 申请日期 2008.08.06
申请人 FUJITSU LIMITED 发明人 OZAKI SHIROU;NAKATA YOSHIHIRO;YANO EI
分类号 C08G77/60;C08G77/62;C08L83/16;H01L21/3205 主分类号 C08G77/60
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