| 摘要 |
An evaluation region of a wafer to be evaluated is divided into concentric circular areas in the radial direction. The upper limit value of the COP quantity is set for each of the divided evaluation areas and the single-crystal silicon wafer is checked according to the upper limit value as a reference. This enables a quantitative and objective COP evaluation and an appropriate judgment based on the clear reference. By applying this evaluation method, it is possible to automate the COP evaluation (inspection) and cope with an improved wafer quality in the future. This method can be widely used in manufacturing of a single-crystal silicon wafer and a semiconductor device.
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