| 摘要 |
<p>A semiconductor device and method of manufacturing the same is provided to obtain excellent electrical characteristic by forming the thickness of element isolation insulating layers to be different. In a semiconductor device and method of manufacturing the same, a first element isolation insulating layer(14c) is formed within the first area of a substrate, and a second element isolation insulating layer(14d) is formed within the second area of the substrate. A first gate insulating layer(58) is formed on the first element area and has the first film thickness. The first gate electrode(24c) is formed on the first gate insulating layer. The first source / drain diffusion layer(64) is formed within the first element area on both sides of the first gate electrode. The second gate insulating layer(68) is formed on the second element area, and has the second film thickness. The thickness of the second film is smaller than that of the first film, and the second gate electrode(24d) is formed on the second gate insulating layer. The second source / drain diffusion layer(74) is formed within the second element area at the both sides of the second gate electrode. The top height of the second element isolation insulating layer is higher than that of the first element isolation insulating layer.</p> |
