SILICON-BASED NANOWIRE HAVING LOW CONTACT RESISTANCE AND METHOD FOR MANUFACTURING THE SAME

摘要

A manufacturing method of base contact resistance silicon nano wire is provided to be contacted when metal wiring and nano wire are joined in case that a transistor other device is made by using the nano wire. A manufacturing method of base contact resistance silicon nano wire comprises steps of: preparing silicon or silicon-germanium nano wire(50); laminating radially a metallic foil(60) at a surface of the nano wire by a sputtering or a method for atomic layer deposition; forming a metal-silicide layer(70) through a thermal process; and removing metal which does not participate in reaction through wet etching.