HARDMASK COMPOSITION COATED UNDER PHOTORESIST AND METHOD FOR PREPARING SEMICONDUCTOR DEVICES USING THEREOF

摘要

A hard mask composition for a photoresist under layer, and a method for preparing a semiconductor integrated circuit device by using the composition are provided to improve film characteristics and storage stability and to enhance the solvent resistance against a resist developer. A hard mask composition for a photoresist under layer comprises a silane condensate which is a condensation polymer of the hydrolyzate formed from at least one compound represented by the formula 1; an ammonium salt; and a solvent, wherein R1 is H, a substituted or unsubstituted C1-C30 aliphatic hydrocarbon group, a substituted or unsubstituted C1-C30 aromatic hydrocarbon group, a substituted or unsubstituted C1-C30 alicyclic hydrocarbon group, a substituted or unsubstituted C1-C30 silyl group, a substituted or unsubstituted C1-C30 allyl group, a substituted or unsubstituted C1-C30 acyl group, a vinyl group, an amine group, an acetate group, or an alkali metal; x is 0-2; and R2 is H, a substituted or unsubstituted C1-C4 aliphatic hydrocarbon group, an acetate group, Na, or K.