PHASE CHANGE MEMORY DEVICE AND OPERATING METHOD THE SAME

摘要

A phase change memory device and an operation method thereof are provided to shorten a write time for writing data of a set state in a write operation mode. A data read process is performed to read data of a selected cell on in a write operation mode(S1). A data comparison process is performed to compare the data read from the cell with data to be written(S2). A determination process is performed to determine whether the data to be written are the first data or not if the read data are different from the data to be written(S4). The first data are written in the cell and a verification process is performed(S6). The first data are written in the cell under a second operation condition and the verification process is performed(S7).