PHASE-CHANGE MEMORY DEVICE AND FABRICATION METHOD THEREOF

摘要

A phase-change memory device and a manufacturing method thereof are provided to reduce a driving current of the phase-change memory device by increasing a contact area between the PN diode and a semiconductor substrate. A semiconductor substrate(100) where a dielectric layer is formed on a junction area(104) is provided. An interlayer insulating film(110) with the etching selectivity lower than the dielectric layer is formed on the overall structure. A contact hole is formed by removing a designated region of the interlayer insulating film and the dielectric layer. A PN diode(114) is formed inside the contact hole by a selective epitaxial growth process. The dielectric layer is the oxide film. The interlayer insulating film is the nitride film. After the PN diode is formed, the bottom electrode contact is formed. The phase change material layer, the top electrode, and the word line and the bit line are formed.