Group III nitride-based compound semiconductor light emitting device

摘要

A group III nitride-based compound semiconductor light emitting device includes a polarity inversion layer including a surface with a convex portion, and a transparent electrode formed on the polarity inversion layer. The polarity inversion layer may have a magnesium concentration of not less than 1x1020 atoms/cm3, or not less than 2x1020 atoms/cm3 and not more than 5x1021 atoms/cm3. The polarity inversion layer may be formed of AlxGa1-xN (0<=x<1) doped with magnesium.