TIME EFFICIENT PHASE CHANGE MEMORY DATA STORAGE DEVICE

摘要

A phase change memory device is presented that includes a phase change resistance cell array and a cache register. The phase change resistance cell array includes a phase change resistor configured to sense crystallization changed depending on currents so as to store data corresponding to resistance change. The cache register is configured to store a plurality of data applied externally depending on a register write command and to simultaneously output the plurality of data to the phase change resistance cell array depending on a cell write command.