PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

摘要

[PROBLEMS] To provide a plasma processing method and a plasma processing apparatus having high coverage characteristics and excellent in-plane uniformity. [MEANS FOR SOLVING PROBLEMS] At the time of depositing sputter particles sputtered from a target (31) by plasma on the surface of a substrate (W), the sputter particles are decomposed by plasma to generate active species, and then deposited on the surface of the substrate. Thus, film configuration similar to that formed by plasma CVD is obtained, and sputter film formation is performed with high coverage characteristics and excellent in-plane uniformity. Especially extremely high density plasma can be efficiently generated in a region with no magnetic field, since high frequency electric field and an annular magnetic neutral line (25) are used for plasma source. The plasma performs plasma processing with high in-plane uniformity by discretionarily adjusting the forming position and the size of the magnetic neutral line.