POWER ADJUSTING METHOD, METHOD FOR MANUFACTURING SILICON EPITAXIAL WAFER, AND SUSCEPTOR

摘要

A first susceptor (13) has a plurality of recessed sections (13b) on a surface whereupon a silicon substrate (W) is to be placed. Power of heaters (17a, 17b) is adjusted so that the heights and depths of a plurality of protruding or recessed epitaxial layers formed at positions corresponding to the recessed sections (13b) on the main surface of the silicon substrate (W) are substantially the same. Thus, the temperature difference between the silicon substrate and the susceptor can be made substantially uniform entirely over the silicon substrate.