| 摘要 |
An image sensor and a manufacturing method thereof are provided to improve a fill factor by forming a photo diode on a first substrate where a readout circuit is formed. A first substrate(100) includes a readout circuit(120). An interlayer insulating film(160) is formed on the first substrate. An lower wiring(150) is positioned inside the interlayer insulating film. A crystalline semiconductor layer(200) is formed on the interlayer insulating film. A photo diode(205) is positioned inside the crystalline semiconductor layer. The photo diode includes the first and second impurity regions(210,220). The crystalline semiconductor layer and the interlayer insulating film expose the lower wiring by being penetrated with an inner via-hole(245). A plug(251) is formed inside the first via-hole to be connected to the lower wiring and the first impurity region. An element isolation region(260) is formed inside the crystalline semiconductor layer and separates the photodiode according to unit pixel.
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