发明名称 FIN-INTEGRATED SEMICONDUCTOR MODULE, AND MANUFACTURING METHOD THEREOF
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a fin-integrated semiconductor module having high quality wherein crack and breakage of a substrate and a mounting member, etc. caused by stress at manufacturing and heat history at driving, etc. are prevented. <P>SOLUTION: This module includes a substrate 11 which is made of metal or ceramics and has groove 11a on its one surface side surface and a circuit pattern 15 formed on another surface side surface, a semiconductor chip 19 mounted on the circuit pattern via a solder 25, and a mold member 21 made of epoxy resin which is so provided as to cover another surface side surface of the substrate including the semiconductor chip. A heat radiating fin 23 is engaged in the groove of the substrate. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009033065(A) 申请公布日期 2009.02.12
申请号 JP20070198128 申请日期 2007.07.30
申请人 MITSUBISHI ELECTRIC CORP 发明人 KITAI KIYOFUMI;GOTO YOICHI
分类号 H01L23/36 主分类号 H01L23/36
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