| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a nonvolatile memory cell which is reducible in program voltage without making a tunnel insulating film thin. SOLUTION: The semiconductor device has a silicon substrate 1 having a principal surface and the nonvolatile memory cell provided on the principal surface of the silicon substrate, wherein the principal surface includes a region 1A where a grooved structure is formed and the nonvolatile memory cell includes a first insulating film as a tunnel insulating film formed on the region 1A, a charge storage layer provided on the first insulating film, a second insulating film provided on the charge storage layer, and a control gate electrode provided on the second insulating film. COPYRIGHT: (C)2009,JPO&INPIT
|
