发明名称 SYSTEMS AND METHODS FOR FORMING METAL OXIDES USING METAL COMPOUNDS CONTAINING AMINOSILANE LIGANDS
摘要 A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include aminosilane ligands.
申请公布号 US2009042406(A1) 申请公布日期 2009.02.12
申请号 US20080248544 申请日期 2008.10.09
申请人 MICRON TECHNOLOGY, INC. 发明人 VAARTSTRA BRIAN A.;QUICK TIMOTHY A.
分类号 H01L21/31;C23C16/00;C23C16/40;C23C16/44;C23C16/455;H01L21/02;H01L21/316 主分类号 H01L21/31
代理机构 代理人
主权项
地址