发明名称 SEMICONDUCTOR CIRCUIT DEVICE, WIRING METHOD FOR SEMICONDUCTOR CIRCUIT DEVICE AND DATA PROCESSING SYSTEM
摘要 Via multiplexing technology is provided which can contribute to high density wiring. For coupling wirings of different wiring layers, a multiple via cell section is used which has vias for electrically coupling wirings bent in an L-shape of different wiring layers on both sides with the L-shaped bent portion therebetween. The vias of the multiple via cell section are on a grid line in an X-direction and a grid line in a Y-direction defined with a minimum wiring pitch, and all or part of the vias of the multiple via cell section are deviated from an intersection of the grid line in the X-direction and the grid line in the Y-direction. The vias of the multiple via cell section are placed on each of the grid line in the X-direction and the grid line in the Y-direction, corresponding to the L-shape, so that there is not much difference between the spatial conditions in the X-direction and the spatial conditions in the Y-direction viewed from the multiple via cell section. Thus, the wirability in the X-direction becomes equivalent to that in the Y-direction.
申请公布号 US2009039520(A1) 申请公布日期 2009.02.12
申请号 US20080188465 申请日期 2008.08.08
申请人 RENESAS TECHNOLOGY CORP. 发明人 TANAKA TERUYA;MIYAZAKI KO
分类号 H01L23/48;G06F17/50 主分类号 H01L23/48
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