| 发明名称 |
Two-terminal resistance switching element with silicon, and semiconductor device |
| 摘要 |
A two-terminal resistance switching element, wherein two silicon films each doped with an impurity are arranged with a gap width in the order of nanometers.
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| 申请公布号 |
US2009039330(A1) |
申请公布日期 |
2009.02.12 |
| 申请号 |
US20080213054 |
申请日期 |
2008.06.13 |
| 申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY |
发明人 |
NAITOH YASUHISA;MORITA YUKINORI;HORIKAWA MASAYO;SHIMIZU TETSUO |
| 分类号 |
H01L47/00 |
主分类号 |
H01L47/00 |
| 代理机构 |
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