| 摘要 |
An electrolyte-gated field effect transistor is disclosed, the transistor comprising an electrolyte including a polymeric ionic liquid analogue. In a preferred embodiment, the transistor further comprises a source electrode, a drain electrode disposed so as to be separated from the source electrode, forming a gap between the source and drain electrodes, a semiconductor layer bridging the gap between the source and drain electrodes and thus forming a transistor channel, and a gate electrode positioned so as to be separated from the source electrode, the drain electrode and the semiconductor layer. In this embodiment, the electrolyte is disposed so as to contact at least a part of both the gate electrode and the semiconductor layer.
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