| 发明名称 |
APPARATUS AND METHOD FOR PLASMA DOPING |
| 摘要 |
Gas supplied to gas flow passages of a top plate from a gas supply device by gas supply lines forms flow along a vertical direction along a central axis of a substrate, so that the gas blown from gas blow holes can be made to be uniform, and a sheet resistance distribution is rotationally symmetric around a substrate center.
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| 申请公布号 |
US2009042321(A1) |
申请公布日期 |
2009.02.12 |
| 申请号 |
US20080183775 |
申请日期 |
2008.07.31 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SASAKI YUICHIRO;OKUMURA TOMOHIRO;ITO HIROYUKI;NAKAMOTO KEIICHI;OKASHITA KATSUMI;MIZUNO BUNJI |
| 分类号 |
H01L21/66;C23C16/513 |
主分类号 |
H01L21/66 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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