发明名称 LOCAL INPUT AND OUTPUT SENSE AMPLIFIER OF SEMICONDUCTOR MEMORY DEVICE
摘要 A local input/output sense amplifier of a semiconductor memory device is provided to enhance sensing performance thereof by using a transistor having a low threshold voltage. A pair of local input/output lines include a local input/output line and an inversion local input/output line(LIO,LIOB). A pair of global input/output lines includes a global input/output line and a reverse global input/output line(GIO,GIOB). A first transistor includes a gate connected with the local input/output line. A second transistor has the same threshold voltage level as the threshold voltage level of the first transistor. A third transistor has a threshold voltage level lower than the threshold voltage level of the first transistor. A fourth transistor has a threshold voltage level lower than the threshold voltage level of the second transistor.
申请公布号 KR20090015660(A) 申请公布日期 2009.02.12
申请号 KR20070080178 申请日期 2007.08.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, SOO HWAN;KIM, BYUNG CHUL
分类号 G11C7/10;G11C7/06;G11C7/08 主分类号 G11C7/10
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