发明名称 |
LOCAL INPUT AND OUTPUT SENSE AMPLIFIER OF SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A local input/output sense amplifier of a semiconductor memory device is provided to enhance sensing performance thereof by using a transistor having a low threshold voltage. A pair of local input/output lines include a local input/output line and an inversion local input/output line(LIO,LIOB). A pair of global input/output lines includes a global input/output line and a reverse global input/output line(GIO,GIOB). A first transistor includes a gate connected with the local input/output line. A second transistor has the same threshold voltage level as the threshold voltage level of the first transistor. A third transistor has a threshold voltage level lower than the threshold voltage level of the first transistor. A fourth transistor has a threshold voltage level lower than the threshold voltage level of the second transistor. |
申请公布号 |
KR20090015660(A) |
申请公布日期 |
2009.02.12 |
申请号 |
KR20070080178 |
申请日期 |
2007.08.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, SOO HWAN;KIM, BYUNG CHUL |
分类号 |
G11C7/10;G11C7/06;G11C7/08 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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