发明名称 THE FIELD EMISSION WITH SILICIDE NANOWIRES AND THE DEVICE FABRICATION METHOD
摘要 A field emission with silicide nano wires and a device fabrication method are provided to improve the performance by increasing the emission current with the less voltage. A substrate is formed of the conductor or the non-electric conductor. The metallic catalyst is coated on the top of substrate. The metallic catalyst is comprised of the metal with the superior conductivity selected from the group including nickel, iron, cobalt, platinum, molybdenum, tungsten, yttrium, gold, and palladium. The silicon layer is formed on the upper side of substrate. The metal silicide layer with the superior conductivity is formed by the reaction between the metallic catalyst and the silicon layer.
申请公布号 KR100883531(B1) 申请公布日期 2009.02.12
申请号 KR20070107471 申请日期 2007.10.24
申请人 KOREA INSTITUTE OF MACHINERY & MATERIALS 发明人 KIM, JOON DONG;HAN, CHANG SOO;LEE, EUNG SUG
分类号 H01J1/30;H01J31/12 主分类号 H01J1/30
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