| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a high strength and high purity silicon carbide porous body at a relatively low temperature of ≤2,000°C. <P>SOLUTION: Silicon carbide powder having 1μm average particle diameter is formed tubular at 150 MPa pressure based on a cold isotropic pressure process (CIP). The resultant formed body is heated at 1,000°C in the air (a 1st firing process) to be partially oxidized. The temperature rising and cooling rate is 5°C/min. The holding time at a maximum heating temperature is 3 hr. Next, liquid sintering (a 2nd firing process) is carried out at 1,400°C under a nitrogen atmosphere. The temperature rising and cooling rate is 5°C/min and the holding time at the maximum sintering is 3hr. The resultant silicon carbide porous body has 223 nm average fine pore diameter, 43.2% porosity and contains about 6.3 mass% oxygen. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
