| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a compound film having few crystal defects. <P>SOLUTION: In order to achieve the object, this apparatus for forming a thin film comprises: two targets 9 which face to each other; a high-density radical source 11 that faces to a space 16 in which the targets 9 oppose to each other, from a direction which is almost vertical to the direction of the opposing targets 9; a substrate holder 13 which faces to the space 16 in which the targets 9 oppose to each other, from a different direction from that of the high-density radical source 11; and magnets 17 which are placed on the back face of each target 9 respectively and generate a magnetic field in an facing direction of the targets 9. A negative voltage is also applied to each target 9 to make the compound film formed on a substrate 15 which is arranged on the substrate holder 13. Thereby, the apparatus inhibits negative ions from colliding to the compound film and consequently can form the compound film having few crystal defects. <P>COPYRIGHT: (C)2009,JPO&INPIT |
