OXIDE FILM FORMING METHOD AND APPARATUS THEREFOR

摘要

PROBLEM TO BE SOLVED: To form a film so as to obtain a uniform distribution of film thickness with respect to a large substrate. SOLUTION: Reaction gas is supplied to the substrate under a temperature region where a plurality of kinds of organic silicon is gasified. An oxide film forming apparatus 1 includes a treatment furnace 2 for storing the substrate 9. The reaction gas containing ozone gas and the plurality of kinds of organic silicon gas is supplied from a gas supply system 4 to the substrate 9. The treatment furnace 2 is adjusted to be the temperature region having the in-furnace temperature where the plurality of kinds of organic silicon is gasified. Tetramethylsilane and hexamethyldisilazane are indicated as examples for the plurality of kinds of organic silicon gas. COPYRIGHT: (C)2009,JPO&INPIT