| 摘要 |
PROBLEM TO BE SOLVED: To inexpensively form a plurality of impurity diffusion layers having different diffusion depths and different impurity density, on the same semiconductor substrate. SOLUTION: Each impurity introduced region 16, in which N-type or P-type impurities are introduced, is formed on the surface of a single-crystal silicon substrate 15. Next, when each impurity introduced region 16 is heated by emitting infrared rays R to the surface of the substrate 15 through opening parts 14a, 14b of a mask 14 by an RTA method, the infrared rays R are radiated only to the parts immediately under the opening parts 14a, 14b. Then, only the impurity introduced regions 16 near the parts irradiated with the infrared rays are locally heated and the impurities are activated and diffused. Consequently, each impurity diffusion layer 17 is formed. Subsequently, when the whole surface of the substrate 15 is simultaneously and uniformly heated, impurities in the parts, not heated in a second step, in each impurity introduced region 16 are activated and diffused. Simultaneously with the formation of each impurity diffusion layer 18, impurities in each impurity diffusion layer 17 are activated again and diffused. Accordingly, each impurity diffusion layer 19 is formed from each impurity diffusion layer 17. COPYRIGHT: (C)2009,JPO&INPIT
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