发明名称 |
Integrated Circuit Having a Cell with a Resistivity Changing Layer |
摘要 |
In an embodiment of the invention, an integrated circuit having a cell is provided. The cell may include a field effect transistor structure which includes a gate stack and a resistivity changing material structure disposed above the gate stack, wherein the resistivity changing material structure includes a resistivity changing material which is configured to change its resistivity in response to the application of an electrical voltage to the resistivity changing material structure.
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申请公布号 |
US2009039329(A1) |
申请公布日期 |
2009.02.12 |
申请号 |
US20070837380 |
申请日期 |
2007.08.10 |
申请人 |
HOFMANN FRANZ;WILLER JOSEF |
发明人 |
HOFMANN FRANZ;WILLER JOSEF |
分类号 |
H01L47/00;H01L21/00 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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