发明名称 |
MULTIPLE DEVICE TYPES INCLUDING AN INVERTED-T CHANNEL TRANSISTOR AND METHOD THEREFOR |
摘要 |
A method for making a semiconductor device is provided. The method includes forming a first transistor with a vertical active region and a horizontal active region extending on both sides of the vertical active region. The method further includes forming a second transistor with a vertical active region. The method further includes forming a third transistor with a vertical active region and a horizontal active region extending on only one side of the vertical active region.
|
申请公布号 |
US2009039418(A1) |
申请公布日期 |
2009.02.12 |
申请号 |
US20080251746 |
申请日期 |
2008.10.15 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
MIN BYOUNG W.;BURNETT JAMES D.;MATHEW LEO |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|