发明名称 Semiconductor memory devices that are resistant to power attacks and methods of operating semiconductor memory devices that are resistant to power attacks
摘要 A semiconductor memory device according to some embodiments includes a random converter that receives data and address information including a start address value and an end address value of the address from a central processing unit (CPU), generates and stores at least one random number for each address value from the start address value to the end address value, performs a logical operation on the random number and the data corresponding to the address, and responsively generates randomized data to be stored in memory. Accordingly, the semiconductor memory device randomizes a power consumption signature that can occur when data is stored, thereby writing and reading data in a manner that is resistant to a power attack.
申请公布号 US2009043969(A1) 申请公布日期 2009.02.12
申请号 US20080221578 申请日期 2008.08.05
申请人 YOON JOONG CHUL;SEO GAE WON;DEROUET ODILE 发明人 YOON JOONG CHUL;SEO GAE WON;DEROUET ODILE
分类号 G06F12/00;G06F21/55;G06F21/79;G06F21/85 主分类号 G06F12/00
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