发明名称 |
Semiconductor memory devices that are resistant to power attacks and methods of operating semiconductor memory devices that are resistant to power attacks |
摘要 |
A semiconductor memory device according to some embodiments includes a random converter that receives data and address information including a start address value and an end address value of the address from a central processing unit (CPU), generates and stores at least one random number for each address value from the start address value to the end address value, performs a logical operation on the random number and the data corresponding to the address, and responsively generates randomized data to be stored in memory. Accordingly, the semiconductor memory device randomizes a power consumption signature that can occur when data is stored, thereby writing and reading data in a manner that is resistant to a power attack.
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申请公布号 |
US2009043969(A1) |
申请公布日期 |
2009.02.12 |
申请号 |
US20080221578 |
申请日期 |
2008.08.05 |
申请人 |
YOON JOONG CHUL;SEO GAE WON;DEROUET ODILE |
发明人 |
YOON JOONG CHUL;SEO GAE WON;DEROUET ODILE |
分类号 |
G06F12/00;G06F21/55;G06F21/79;G06F21/85 |
主分类号 |
G06F12/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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