METHOD AND DEVICE FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To efficiently reduce an amount of warpage of a silicon carbide single crystal substrate. SOLUTION: A grinding-polishing device 2a is equipped with a grinding-polishing part 10 and a curved surface pedestal 31. The grinding-polishing part 10 performs grinding-polishing on a surface of the substrate 1. The curved surface pedestal 31 comprises a curved surface part 31a. The curved surface part 31a comprises a curved surface shape suitable for a shape of the warpage of the substrate 1. The curved surface part 31a has a concave shape. The curved surface part 31a is a secondary curved surface. The substrate 1 is placed on the curved surface part 31a to show a first surface 1a on the surface side. COPYRIGHT: (C)2009,JPO&INPIT