发明名称 COMPOSITE FOCUSED ION BEAM APPARATUS, AND MACHINING MONITORING METHOD AND MACHINING METHOD USING COMPOSITE FOCUSED ION BEAM APPARATUS
摘要 A composite focused ion beam apparatus is provided with a first ion beam irradiation system (10) having a plasma type gas ion source for generating firs ions; and a second ion beam irradiation system (20) having a gas field ion source for generating second ions. The beam diameter of the second ion beam (20A) outputted from the second ion beam irradiation system (20) is smaller than the beam diameter of the first ion beam (10A) outputted from the first ion beam irradiation system (10). Since the composite focused ion beam apparatus does not use a liquid metal ion source, high-speed machining can be performed without contaminating a sample, and high-resolution monitoring and fine machining can be performed.
申请公布号 WO2009020151(A1) 申请公布日期 2009.02.12
申请号 WO2008JP64123 申请日期 2008.08.06
申请人 SII NANOTECHNOLOGY INC.;KAITO, TAKASHI;NAKAGAWA, YOSHITOMO;TASHIRO, JUNICHI;SUGIYAMA, YASUHIKO;FUJII, TOSHIAKI;AITA, KAZUO;OGAWA, TAKASHI 发明人 KAITO, TAKASHI;NAKAGAWA, YOSHITOMO;TASHIRO, JUNICHI;SUGIYAMA, YASUHIKO;FUJII, TOSHIAKI;AITA, KAZUO;OGAWA, TAKASHI
分类号 H01J37/317;G01N1/28;H01J37/08;H01J37/30 主分类号 H01J37/317
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