| 摘要 |
This invention provides a process for producing compound semiconductor fine particles, which can prepare monodisperse compound semiconductor fine particles according to purposes, is free from clogging of a product by virtue of self-discharge properties, does not require large pressure, and can realize high productivity. A material for a semiconductor is deposited and precipitated in a fluid to produce compound semiconductor fine particles. The fluid is a thin-film fluid produced, in a part between treatment faces at least one of which is rotated relative to the other treatment face, from fluid parts which are disposed opposite to each other so that they can come close to each other and come off from each other. The material for a semiconductor is deposited and precipitated in the thin-film fluid. Alternatively, a process may also be adopted in which a compound containing a semiconductor element is reacted with a reducing agent in a fluid to produce semiconductor fine particles containing the semiconductor element. In this case, the fluid is a thin-film fluid produced, in a part between treatment faces at least one of which is rotated relative to the other treatment face, from fluid parts which are disposed opposite to each other so that they can come close to each other and come off from each other. The compound containing a semiconductor element is reacted with a reducing agent in the thin-film fluid. |
