| 摘要 |
<p>Methods include utilizing a single mask layer (306) to form tightly spaced, adjacent first-type and second-type well regions (310, 314). The mask layer is formed over a substrate (302) in a region in which the second-type well regions will be formed. The first-type well regions are formed in the exposed portions of the substrate. Then, the second-type well-regions are formed through the resist mask.</p> |
