THIN FILM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF

摘要

A thin film transistor substrate and a manufacturing method thereof are provided to improve the aperture ratio and reduce the number of data lines. A thin film transistor substrate comprises the followings: a thin film transistor(130) which is formed so as to be connected with a gate line(GL) and data line(DL) on a substrate; a pixel electrode which is formed in a sub-pixel region prepared by the intersection of the gate line and data line; a common electrode which forms the horizontal electric field with the pixel electrode; a common line(CL) which is formed parallel with the data line to supply the common voltage to the common electrode; and a storage capacitor which is formed so as to be adjacent to at least one of the gate line and data line in order to maintain a pixel signal charged in the pixel electrode.