NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A non-volatile memory device and method of fabricating the same is provided to improve charge storage capacity by forming an oxide film that surrounds a nano crystal. In a non-volatile memory device and method of fabricating the same, a charge trapping layer(140) is formed on the semiconductor substrate. A charge trapping layer includes more than two laminated sub charge trap layers(142,144). A gate electrode is formed on the charge trapping layer, each sub charge trap layer includes a nano-crystal layer(120 NC) including a plurality of nano crystals and the dielectric layer(130) covering the nanocrystal layer. At least one of the sub charge trap layers includes the oxide film(127) that surrounds each nano-crystal. The tunnel layer(110) is interposed between the semiconductor board and the charge trapping layer. The blocking layer(150) is interposed between the charge trapping layer and the gate electrode.