| 摘要 |
A unit pixel improving image sensitivity and dynamic range is provided to suppress the switching noise by increase the thickness of an insulator of an overlap capacitor. In a unit pixel improving image sensitivity and dynamic range, a photo diode(PD) producing an image charge corresponding to image signal is formed on the left surface of substrate. The gate terminal(TX) of the transfer transistor is installed between the photo diode and a floating diffusion area(FD). The gate terminal(RX) of a reset transistor is formed between the diffusion region to which the floating diffusion area and power supply voltage(Vdd) are applied. Two gate terminals are installed on the surface of the substrate, and an insulating material exists between the gate terminal and the substrate. The electrical characteristic of the insulating material determines not only the threshold voltage of the MOS transistor but also the rated voltage of the MOS transistor. The concentration of the impurity ion injected in the floating diffusion area is lower than that of the impurity ion injected in the diffusion region of the reset transistor.
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