| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide: a semiconductor element that does not cause leak of current from an electrode or destruction of the element and also excellent in light extraction efficiency; and a method for manufacturing the same. <P>SOLUTION: A semiconductor light emitting element including: a first conductivity semiconductor layer; a second conductivity semiconductor layer; a semiconductor light emitting portion having a light emitting layer interposed between the first conductivity semiconductor layer and the second conductivity semiconductor layer; a first conductivity semiconductor side electrode connected to the first conductivity semiconductor layer; and a second conductivity semiconductor side electrode connected to the second conductivity semiconductor layer, wherein the second conductivity semiconductor side electrode is disposed separated from an insulator film covering the semiconductor light emitting portion via a separation area. <P>COPYRIGHT: (C)2009,JPO&INPIT |
