发明名称 |
Method For Utilizing Heavily Doped Silicon Feedstock To Produce Substrates For Photovoltaic Applications By Dopant Compensation During Crystal Growth |
摘要 |
A method for using relatively low-cost silicon with low metal impurity concentration by adding a measured amount of dopant and or dopants before and/or during silicon crystal growth so as to nearly balance, or compensate, the p-type and n-type dopants in the crystal, thereby controlling the net doping concentration within an acceptable range for manufacturing high efficiency solar cells.
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申请公布号 |
US2009039478(A1) |
申请公布日期 |
2009.02.12 |
申请号 |
US20080044887 |
申请日期 |
2008.03.07 |
申请人 |
BUCHER CHARLES E;MELER DANIEL L;LEBLANC DOMINIC;BOLAVART RENE |
发明人 |
BUCHER CHARLES E.;MELER DANIEL L.;LEBLANC DOMINIC;BOLAVART RENE |
分类号 |
H01L29/06;H01L21/66 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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